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J110 JFET - General Purpose
N-Channel - Depletion
N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers.
Features
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1 DRAIN
* * * * * * * *
N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/Hz @ 10 Hz (Typ) Pb-Free Packages are Available*
3 GATE
2 SOURCE
MARKING DIAGRAM
MAXIMUM RATINGS
Rating Gate-Source Voltage Drain -Gate Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Operating Junction Temp Range Storage Temperature Range TJ Tstg Symbol VGS VDG IG PD 310 2.82 135 -65 to +150 mW mW/C C C J110 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) Value -25 -25 10 Unit Vdc Vdc mAdc
1 2 3
CASE 29 TO-92 (TO-226) STYLE 5
J110 AYWW G G
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device J110 J110G J110RLRA J110RLRAG Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) Shipping 1000 Units / Box 1000 Units / Box 2000 / Tape & Reel 2000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
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November, 2005 - Rev. 6
Publication Order Number: J110/D
J110
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic STATIC CHARACTERISTICS Gate -Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Drain Source On-Resistance Zero-Gate-Voltage Drain Current (Note 1) DYNAMIC CHARACTERISTICS Drain-Gate and Source-Gate On-Capacitance (VDS = VGS = 0, f = 1.0 MHz) Drain-Gate Off-Capacitance Source-Gate Off-Capacitance 1. Pulse Width = 300 ms, Duty Cycle = 3.0%. (VGS = -10 Vdc, f = 1.0 MHz) (VGS = -10 Vdc, f = 1.0 MHz) Cdg(on) + Csg(on) Cdg(off) Csg(off) - 85 pF (IG = -1.0 mAdc) (VGS = -15 Vdc, VDS = 0) (VGS = -15 Vdc, VDS = 0, TA = 100C) (VDS = 5.0 Vdc, ID = 1.0 mAdc) (VDS v 0.1 V, VGS = 0 V) (VDS = 15 Vdc) V(BR)GSS IGSS VGS(off) RDS(on) IDSS -25 - - -0.5 - 10 - -3.0 -200 -4.0 18 - Vdc nAdc Vdc W mAdc Symbol Min Max Unit
- -
15 15
pF pF
Crss, FEEDBACK CAPACITANCE (pF)
100 Ciss, INPUT CAPACITANCE (pF)
100 80
80
60
VDS = 0 V 5V
60
40 10 V
40
VDS = 0 V
20 0 0
20 0 0
5V 10 V -4 -8 -12 -16 -20 VGS, GATE-SOURCE VOLTAGE (VOLTS)
-4
-8
-12
-16
-20
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance versus Gate-Source Voltage
16 RDS(on), DRAIN-SOURCE ON-RESISTANCE (OHMS) 100 90 ID, DRAIN CURRENT (mA) 80 70 60 50 40 30 20 10 0 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS(off), GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 0 12 RDS(on): VDS 0.1 V RDS(on): VGS = 0 V 8
Figure 2. Common Source Reverse Feedback Capacitance versus Gate-Source Voltage
VGS = 0 V -0.25 V
-0.5 V
-0.75 V -1 V -1.25 V 2 4 6 8 10 12 14 16 18 20
4
VGS(off): VDS = 5 V VGS(off): ID = 1.0 mA
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance versus Gate-Source Cutoff Voltage
Figure 4. Output Characteristic VGS(off) = -2.0 V
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J110
200 180 ID, DRAIN CURRENT (mA) 160 140 120 100 80 -1.5 V 60 40 20 0 0 2 4 6 8 10 12 14 16 -2 V -2.5 V 18 20 -1 V VGS = 0 V -0.5 V ID, DRAIN CURRENT (mA) 300 270 240 210 180 150 120 90 60 30 0 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) -2.5 V -3 V -1.5 V -2 V VGS = 0 V -0.5 V -1 V
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristic VGS(off) = -3.0 V
Figure 6. Output Characteristic VGS(off) = -4.0 V
400 360 ID, DRAIN CURRENT (mA) 320 280 240 200 160 120 80 40 0 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS = 0 V -0.5 V -1 V -1.5 V -2 V -2.5 V -3 V -3.5 V
Figure 7. Output Characteristic VGS(off) = -5.0 V
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J110
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
DIM A B C D G H J K L N P R V
STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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J110/D

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